SSG4403
SSG4403 is P-Ch Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
FEATURES
Low Gate Charge Lower On-resistance Fast Switching Characteristic
PACKAGE DIMENSIONS
DD D D
4403SC
= Date Code
Gate
123 4
SS SG
ABSOLUTE MAXIMUM RATINGS
Drain Source
LD M
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF.
45° 1.35 1.75 0.10 0.25
0.25 REF.
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power...
