SeCoS Halbleitertechnologie GmbH SSG4403
The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.| Part No. | SSG4403 |
|---|---|
| Datasheet | SSG4403 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | P-Ch Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS DD D D 8765 4403SC = Date Code Gate 123 4 SS SGABSOLUTE MAXIMUM RATINGS
Drain Source B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation VGS ID @Ta=25℃ ID @Ta=70℃ IDM PD @Ta=25℃ Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Junction-ambient3 THERMAL DATA Max. Rθj-amb RATINGS -30 ±12 -6.1 -5.1 -60 2.5 0.02 -55 ~ +150 50 UNIT V V A A A W W/℃ ℃ ℃/W P-CHANNELELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain-Source Breakdown Voltage B...
