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SSG4407 - P-Channel Enhancement Mode Power MosFET

Description

The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Lower On-Resistance.
  • Simple Drive Requirement.
  • Fast Switching Characteristic DDDD 8 765 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.375 REF 3.80 4.00 0.35 1.27 Typ. 0.49 4.80 0.10 0.25 5.00 o 0 1.35 1.75 o 8 Dimensions in millimeters D Date Code 4407SC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction a.

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Datasheet Details

Part number SSG4407
Manufacturer SeCoS
File Size 472.77 KB
Description P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SSG4407 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente Description SSG4407 -10.7A, -30V,RDS(ON) 14m P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 The SSG4407 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. Features * Lower On-Resistance * Simple Drive Requirement * Fast Switching Characteristic DDDD 8 765 0.40 0.90 6.20 5.80 0.25 0.19 0.25 o 45 0.375 REF 3.80 4.00 0.35 1.27 Typ. 0.49 4.80 0.10 0.25 5.00 o 0 1.35 1.
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