SSI3439J Datasheet | SeCoS Halbleitertechnologie GmbH

DESCRIPTION SSI3439J is N and P Channel enhancement MOS Field Effect Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for the use in DC-DC conversion, load switch and level shift. SOT-563 FEATURES Surface mount package Low RDS(ON) ESD-protecting gate APPLICATIONS Load/power switching Interfacing switching Battery management for Ultra small portable electronics REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 MARKING 49K PACKAGE INFORMATION Package SOT-563 3K Leader Size 7 inch MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Typical Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current@ tp=10µs Thermal Resistance from Junction to Ambient 1 Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Junction and Storage Temperature Range VDS VGS ID IDM RθJA TL TJ, TSTG Part Number N-Channel P-Channel...