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SSI318-C - Dual N-Channel MOSFET

General Description

The SSI318-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Reliable and Rugged Green Device Available ESD Protection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSI318-C 0.25A, 50V, RDS(ON) 1.6Ω Dual N-Channel ENHANCEMENT MODE POWER MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SSI318-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI318-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-563 A B FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING 318 PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch J D CF GH E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.