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SSI3439J - N & P-Ch Enhancement Mode Power MOSFET

General Description

Effect Transistor.

design to provide excellent RDS(ON) with low gate charge.

switch and level shift.

Key Features

  • Surface mount package Low RDS(ON) ESD-protecting gate.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSI3439J -Ch: 0.75A, 20V, RDS(O ) 380 mΩ P-Ch: -0.66A, -20V, RDS(O ) 520 mΩ & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SSI3439J is N and P Channel enhancement MOS Field Effect Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for the use in DC-DC conversion, load switch and level shift. B SOT-563 A FEATURES Surface mount package Low RDS(ON) ESD-protecting gate APPLICATIONS Load/power switching Interfacing switching Battery management for Ultra small portable electronics J D C F G H E REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF.