Datasheet Summary
Elektronische Bauelemente
-Ch: 0.75A, 20V, RDS(O ) 380 mΩ P-Ch: -0.66A, -20V, RDS(O ) 520 mΩ & P-Ch Enhancement Mode Power MOSFET
RoHS pliant Product A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSI3439J is N and P Channel enhancement MOS Field
Effect Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for the use in DC-DC conversion, load switch and level shift.
SOT-563
Features
Surface mount package Low RDS(ON) ESD-protecting gate
APPLICATIONS
Load/power switching Interfacing switching Battery management for Ultra small portable electronics
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