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STT3998N-C Datasheet - SeCoS

Dual N-Channel MOSFET

STT3998N-C Features

* Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7 inch ORDER INFORMATION Part Number Type STT3998N-C Lead (Pb)-free and Halogen-free TSOP-6 A E L 654 B 123 F DG K C H J REF. A B C D E F

STT3998N-C General Description

The STT3998N-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The STT3998N-C meet the RoHS and Green Product requirement with full function reliability approv.

STT3998N-C Datasheet (365.40 KB)

Preview of STT3998N-C PDF

Datasheet Details

Part number:

STT3998N-C

Manufacturer:

SeCoS

File Size:

365.40 KB

Description:

Dual n-channel mosfet.
Elektronische Bauelemente STT3998N-C 4A, 20V, RDS(ON) 37mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies.

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STT3998N-C Dual N-Channel MOSFET SeCoS

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