STT2603 - P-Channel Enhancement Mode Power MosFET

Product Overview

SeCoS Halbleitertechnologie GmbH

Datasheet Details

Part number	STT2603
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	525.85 KB
Description	P-Channel Enhancement Mode Power MosFET
Datasheet	STT2603 Datasheet
Additional preview pages of the STT2603 datasheet.

Product details

Description

The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The STT2603 is universally used for all commercial industrial surface mount application .

Features

Small package outline.
Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain C.

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Other Datasheets by SeCoS Halbleitertechnologie GmbH

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Published: Dec 29, 2009 |