* 2.54 2.54 ISOLATED TO220 Pin 1
* Base Pin 2
* Collectorn Pin3
* Emitter
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and h
BUL52AFI
Seme LAB
63.63 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 D.
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