* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL52BFI
Seme LAB
18.82 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52BFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 D.
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