* 2.54 2.54 TO220 Pin 1
* Base Pad 2
* Collector Pad 3
* Emitter
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accur
BUL56B
Seme LAB
19.61 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL56B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
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