BUL62B
FEATURES
- Multi- base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple Guard Rings for improved control of high voltages.
4.60 (0.181) Typ.
1.04 (0.041) 1.14 (0.045)
I- PAK (TO- 251)
Pin 1
- Base Pin 2
- Collector Pin 3
- Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector
- Base Voltage Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
800V 400V 10V 8A 12A 4A 25W
- 55 to +150°C
Prelim. 3/95
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)...
