base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3.
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LAB
MECHANICAL DATA Dimensions in mm
6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215)
SEME
BUL68B
2.18 (0.086) 2.44 (0.096)
0.84 (0.033) 0.94 (0.037)
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING
1.09 (0.043) 1.30 (0.051)
5.97 (0.235) 6.22 (0.245)
1
2
3
0.76 (0.030) 1.14 (0.045)
0.64 (0.025) 0.89 (0.035)
8.89 (0.350) 9.78 (0.385)
2.31 (0.091) Typ.
2.31 (0.091) Typ.
0.46 (0.018) 0.61 (0.024)
FEATURES
• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Pin 3 – Emitter
4.60 (0.181) Typ.
1.
BUL68B Datasheet
