D1005UK
Key Features
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN - 16 dB MINIMUM
- Part: D1005UK
- Description: METAL GATE RF SILICON FET
- Manufacturer: Seme LAB
- Size: 57.61 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| Q62702-D1005 | Siemens Semiconductor Group | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| D10040180GTH | PDI | GaAs Power Doubler |
| D10040200GTH | PDI | GaAs Power Doubler |
| D10040220GT | PDI | GaAs Power Doubler |
| D10040220GTH | PDI | GaAs Power Doubler |
| D10040240GT | PDI | GaAs Power Doubler |
| D10040240GTH | PDI | GaAs Power Doubler |
| D10040250GT | PDI | GaAs Power Doubler |
| D10040270GTH | PDI | GaAs Power Doubler |
| D10040230P1 | PREMIER DEVICES | Hybrid Power Doubler amplifier module |