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IRFY1310M-T257
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
BVDSS
VGS(th)
IGSS
IGSS
SPTaAraTmICeEteLrECTRICAL RATINGS
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
IDSS Zero Gate Voltage Drain Current
Static Drain – Source On–State
VDS(on) Voltage1
Test Conditions
VGS = 0
ID = 250mA
VDS = VGS
ID = 250mA
VGS £ 20V
VGS = -20V
VDS = Max Rate,VGS = 0V
VDS = 0.8 Max Rate, VGS = 0V
TC = 125°C
VGS = 10V
ID = 22A
RDS(on) Static Drain – Source On–State
Resistance1
VGS = 10V
ID = 22A
DYNAMIC CHARACTERISTICS
Gfs Forward Transductance 1
VDS = 25V
ID = 22A
Ciss Input Capacitance
VGS = 0V
Coss Output Capacitance
VDS = 25V
Crss Reverse Transfer Capacitance
F = 1MHz
td(on) Turn–On Delay Time
tr Rise Time
VDD = 50V
ID = 22A
td(off) Turn–Off Delay Time
RG = 3.6W
RD = 2.9W
tf Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
IS (Body Diode)
ISM Source Current1 (Body Diode)
Modified MOSPOWER
smbol showing
the integral P-N
/
Junction rectifier
,
5
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 22A ,VGS = 0V, TC = 25°C
TJ = 25°C
IF =22A
di / dt = 100A/ms
Min.
100
2.0
14
Typ.
0.1
0.2
1.10
1900
450
230
11
56
45
40
180
1.2
Max. Unit
4.0
100
-100
0.25
1.0
V
nA
mA
1.30 V
0.55
W
S
pF
ns
34
A
112
1.3 V
270 ns
1.8 mc
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/99
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