• Part: IRFY120
  • Description: N-CHANNEL POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Seme LAB
  • Size: 48.06 KB
Download IRFY120 Datasheet PDF
Seme LAB
IRFY120
IRFY120 is N-CHANNEL POWER MOSFET manufactured by Seme LAB.
FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 100V 7.3A 0.31Ω 10.41 10.92 2.54 BSC 2.65 2.75 - HERMETICALLY SEALED TO- 220 METAL PACKAGE - SIMPLE DRIVE REQUIREMENTS TO- 220M - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source - LIGHTWEIGHT - SCREENING OPTIONS AVAILABLE - ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RθJC RθJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 7.3A 4.6A 29A 30W 0.24W/°C - 55 to 150°C 4.1°C/W max. 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/95 .. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS ∆TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On- State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain (“Miller”) Charge Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1m A VGS = 10V VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 VGS = 20V VGS...