IRFY1310M-T257 Datasheet | Seme LAB

FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.07 (0.500) 19.05 (0.750) 100V 14A .055W 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC - HERMETICALLY SEALED TO257 METAL PACKAGE - SIMPLE DRIVE REQUIREMENTS - LIGHTWEIGHT TO257AA - Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate - SCREENING OPTIONS AVAILABLE - ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL R JC q Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) ±20V 34A 21A 136A 100W 0.8W/°C - 55 to 150°C 300°C 1.25°C/W max. Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Prelim. 7/99 .. ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) STATIC ELECTRICAL RATINGS Parameter Drain - Source Breakdown Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current Static Drain - Source On- State Voltage1 Resistance1 DYNAMIC CHARACTERISTICS Gfs Forward Transductance 1 Ciss Coss Crss td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn- On Delay Time Rise Time Turn- Off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Modified MOSPOWER , Test Conditions VGS = 0 VDS = VGS VGS £ 20V VGS = -20V VDS = Max Rate,VGS = 0V ID = 250m A ID = 250m A Min. 100...