HCD65R660S - 650V N-Channel Super Junction MOSFET

SemiHow

Datasheet Details

Part number	HCD65R660S
Manufacturer	SemiHow
File Size	283.50 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCD65R660S-SemiHow.pdf

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = 650 V RDS(on) typ = 0.6 ȍ ID = 6.2 A D-PAK I-PAK 2 1 1 32 3 HCD65R660S HCU65R660S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter V.

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Published: Apr 8, 2016 |