Part number:
HCD65R660S
Manufacturer:
SemiHow
File Size:
283.50 KB
Description:
650v n-channel super junction mosfet.
HCD65R660S Datasheet (283.50 KB)
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Teste
HCD65R660S Datasheet (283.50 KB)
HCD65R660S
SemiHow
283.50 KB
650v n-channel super junction mosfet.
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