HFA11N90 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFA11N90 March 2014 HFA11N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 11.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-247 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.