HFD5N50S Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD5N50S_HFU5N50S OCT 2009 HFD5N50S / HFU5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 4.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N50S 1 2 3 HFU5N50S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dr.