HFP12N65S Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP12N65S Aug 2009 HFP12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.