HFP13N65U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Overview: HFP13N65U HFP13N65U 650V N-Channel MOSFET.

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.