HFP35N75 Datasheet 75V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP35N75 Dec 2008 HFP35N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 40 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.024 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Curren.