HFP5N70S - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Curren.

📁 HFP5N70S Similar Datasheet

HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP50N06 - N-Channel MOSFET (Shantou Huashan)
HFP50N06V - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Apr 18, 2016 |