HFP6N70U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFP6N70U HFP6N70U 700V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.