HFP6N70U - N-Channel MOSFET

SemiHow

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.

📁 HFP6N70U Similar Datasheet

HFP60N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP630 - N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)
HFP13N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP13N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP15N06 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP17N10 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP4N65 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFP50N06 - N-Channel MOSFET (Shantou Huashan)

Other Datasheets by SemiHow

Published: Apr 18, 2016 |