Datasheet4U Logo Datasheet4U.com

HFP6N90 Datasheet - SemiHow

N-Channel MOSFET

HFP6N90 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFP6N90 Datasheet (1.15 MB)

Preview of HFP6N90 PDF

Datasheet Details

Part number:

HFP6N90

Manufacturer:

SemiHow

File Size:

1.15 MB

Description:

N-channel mosfet.

📁 Related Datasheet

HFP6N60U N-Channel MOSFET (SemiHow)

HFP6N65U N-Channel MOSFET (SemiHow)

HFP6N70U N-Channel MOSFET (SemiHow)

HFP60N06 N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

HFP630 N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)

HFP630 200V N-Channel MOSFET (SemiHow)

HFP630A 200V N-Channel MOSFET (SemiHow)

HFP634 250V N-Channel MOSFET (SemiHow)

HFP640 200V N-Channel MOSFET (SemiHow)

HFP640 N-Channel Enhancement Mode Field Effect Transistor (Shantou Huashan)

TAGS

HFP6N90 N-Channel MOSFET SemiHow

Image Gallery

HFP6N90 Datasheet Preview Page 2 HFP6N90 Datasheet Preview Page 3

HFP6N90 Distributor