HFS2N65U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS2N65U HFS2N65U 650V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7S#9GS=10V 100% Avalanche Tested Nov 2013 BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 2 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR.