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HFS730U Datasheet Preview

HFS730U Datasheet

N-Channel MOSFET

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HFS730U
400V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 13 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.75 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Oct 2013
BVDSS = 400 V
RDS(on) typ = 0.75 ȍ
ID = 6.0 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
400
6.0*
3.6*
24*
ρ30
300
6.0
9.8
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
35
0.28
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.56
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥ͑ͣͤ͑͢͡




SemiHow

HFS730U Datasheet Preview

HFS730U Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Odering Information
Device Marking
HFS730U
HFS730US
HFS730U
HFS730US
Week Marking
YWWX
YWWX
YWWXg
YWWXg
Package
TO-220F(A)
TO-220F(B)
TO-220F(A)
TO-220F(B)
Packing
Tube
Tube
Tube
Tube
Quantity
50
50
50
50
RoHS Status
Pb Free
Pb Free
Halogen Free
Halogen Free
TO-220F(A) : Dual Gauge, TO-220F(B) : Single Gauge
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3 A
2.5 -- 4.5
-- 0.75 1.0
V
Ÿ
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125
VGS = ρ30 V, VDS = 0 V
400
--
--
--
--
-- -- V
0.5 -- V/
-- 1
-- 10
-- ρ100
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 700 900
-- 70 90
-- 8.5 11
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 200 V, ID = 6.0 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 320V, ID = 6.0 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
25 60
35 80
60 130
30 70
13 17 nC
4 -- nC
4 -- nC
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 6.0 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 6.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
-- 6.0
-- 24
-- 1.4
218 --
1.3 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.6mH, IAS=6.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΀ΔΥ͑ͣͤ͑͢͡


Part Number HFS730U
Description N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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