HFU2N60U Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N60U 1 2 3 HFU2N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Param.