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SPM6M080-010D Datasheet Three-Phase MOSFET BRIDGE

Manufacturer: Sensitron

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Datasheet Details

Part number SPM6M080-010D
Manufacturer Sensitron
File Size 95.56 KB
Description Three-Phase MOSFET BRIDGE
Download SPM6M080-010D Download (PDF)

General Description

: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC O BVDSS ID IDM VGS IGSS ICSS 100 - - 80 70 200 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V www.DataSheet4U.com Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 150 C O O 1 3 RDSon 0.009 0.018 RθJC Tjmax Tjmax -40 -55 0.012 0.65 150 150 o mA mA V C/W o o C C • 221 West Industry Court  Deer Park, NY 11729  (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 7 SPM6M080-010D SENSITRON TECHNICAL DATA Datasheet 4118, Rev.

C Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 105 110 10 20 115 o C 10mV/oC o C DIODES CHARACTERISTICS Continuous Source Current, TC = 90 OC Diode Forward Voltage, IS = 60A, Tj = 25 C O IS VSD trr - - 70 1.15 A V nsec Diode Reverse Recovery Time (IS=50A, VDD=50V , di/dt=100 A/µs) 70 - Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Reference Voltage (1) VCC HIN, LIN Ith BVin VF VCCUV Itrip-ref tond tr toffd tf - 10 2 5.0 11.5 2.5 - 15 20 5.0 V mA mA V V V V nsec 1.6 1.5 2.6 700 50 750 60

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4118, Rev.

C SPM6M080-010D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical.

Key Features

  • 4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features are activated, SD is pulled down. 7- SD can be used to shutdown all MOSFETs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output.

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