SPM6M070-020D Overview
Description
A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC TC = 90 C Pulsed Drain Current, Pulse Width limited by TjMax Gate to Source Voltage BVDSS ID O 200 - - V - - 70 60 A IDM VGS IGSS ICSS - - 300 +/-20 +/- 200 A V nA Gate- Source Leakage Current , VGE = +/-20V Zero Gate Voltage Drain Current VDS = 200 V, VGS=0V Ti=25oC VDS= 160 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, O 1 3 Tj = 25 C Tj = 125 O mA mA V RDSon - 0.023 0.050 0.025 - C ID= 50A, VGS = 15V, Maximum o C/W o C C o - 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - Page 1 of 7 SPM6M070-020D SENSITRON TECHNICAL DATA Datasheet 4171, Rev. Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115 o C 10mV/oC o C DIODES CHAR ACTERISTICS Continuous Source Current, TC = 90 OC Diode Forward Voltage, IS = 50A, Tj = 25 C O IS VSD trr - - 60 1.5 A V nsec Diode Reverse Recovery Time (IS=50A, VDD=100V , di/dt=100 A/µs) 220 - Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Reference Voltage (1) Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fa.
