Datasheet4U Logo Datasheet4U.com

SPM6M070-020D Datasheet Three-Phase MOSFET BRIDGE

Manufacturer: Sensitron

📥 Download Datasheet

Datasheet Details

Part number SPM6M070-020D
Manufacturer Sensitron
File Size 131.11 KB
Description Three-Phase MOSFET BRIDGE
Download SPM6M070-020D Download (PDF)

General Description

: A 200 VOLT, 70 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC TC = 90 C Pulsed Drain Current, Pulse Width limited by TjMax Gate to Source Voltage www.DataSheet4U.com BVDSS ID O 200 - - V - - 70 60 A IDM VGS IGSS ICSS - - 300 +/-20 +/- 200 A V nA Gate- Source Leakage Current , VGE = +/-20V Zero Gate Voltage Drain Current VDS = 200 V, VGS=0V Ti=25oC VDS= 160 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, O 1 3 Tj = 25 C Tj = 125 O mA mA V RDSon - 0.023 0.050 0.025 - C ID= 50A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature RθJC Tjmax Tjmax -40 -55 0.35 150 150 o C/W o C C o • 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - sales@sensitron.com • Page 1 of 7 SPM6M070-020D SENSITRON TECHNICAL DATA Datasheet 4171, Rev.

Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115 o C 10mV/oC o C DIODES CHAR ACTERISTICS Continuous Source Current, TC = 90 OC Diode Forward Voltage, IS = 50A, Tj = 25 C O IS VSD trr - - 60 1.5 A V nsec Diode Reverse Recovery Time (IS=50A, VDD=100V , di/dt=100 A/µs) 220 - Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5mA Under Voltage Lockout ITRIP Reference Voltage (1) Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time @ VCC

Overview

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4171, Rev.

- SPM6M070-020D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical.

Key Features

  • 4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features are activated, SD is pulled down. 7- SD can be used to shutdown all MOSFETs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output.

More Datasheets from Sensitron

Part Number Description
SPM6M020-060D Three-Phase MOSFET BRIDGE
SPM6M050-010D Three-Phase MOSFET BRIDGE
SPM6M060-010D Three-Phase MOSFET BRIDGE
SPM6M080-010D Three-Phase MOSFET BRIDGE
SPM6G060-120D Three-Phase IGBT BRIDGE
SPM6G080-060D Three-Phase IGBT BRIDGE
SPM6G080-120D Three-Phase IGBT BRIDGE
SPM6G120-120D Three-Phase IGBT BRIDGE
SPM6G140-060D Three-Phase IGBT BRIDGE
SPM6G150-060D Three-Phase IGBT BRIDGE