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Si2307 - P-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package.

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Datasheet Details

Part number Si2307
Manufacturer SiPU
File Size 113.88 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet Si2307 Datasheet

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Full PDF Text Transcription

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Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 80@ VGS=-4.5V 100 @ VGS=-2.5V NOTE The Si2307is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -4.0 IDM -12 IS -1.25 PD 1.
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