Q62702P1137 Datasheet Infra-red Emitter 5mm

Manufacturer: Siemens Semiconductor Group (now Infineon)

Q62702P1137 infra-red emitter 5mm by Siemens Semiconductor Group (now Infineon) - Datasheet Preview

Datasheet Details

Part number	Q62702P1137
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	77.73 KB
Description	Infra-red Emitter 5mm
Datasheet	Q62702P1137 Datasheet

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current

Overview

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode www.DataSheet4U.com 29 27 9.0 8.2 spacing 2.54 mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 ø4.8 ø5.1 Area not flat Chip position 4.8 4.2 0.6 0.4 GEO06645 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 fex06630 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Key Features

q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

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