q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81 Applications q Miniature phot.

q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and drive circuits Typ Type.

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation .

LD261

LD2614444

LD260

LD262

LD263

LD264

LD265

LD266

LD267

LD268

LD269

LD20-5T

LD200011A