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BF999 Silicon N-Channel MOSFET Triode

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Description

Silicon N Channel MOSFET Triode q BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type BF 999 Marking LB Ordering C.

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Datasheet Specifications

Part number
BF999
Manufacturer
Siemens Semiconductor Group
File Size
116.22 KB
Datasheet
BF999_SiemensSemiconductorGroup.pdf
Description
Silicon N-Channel MOSFET Triode

Applications

* Type BF 999 Marking LB Ordering Code (tape and reel) Q62702-F1132 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Thermal Resis

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Silicon N-Channel MOSFET Triode Siemens Semiconductor Group
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