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BTS410E2 - Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

Fully protected by embedded protection functions.

Features

  • Overload protection.
  • Current limitation.
  • Short circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Open drain diagnostic output.
  • Open load detection in ON-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb.

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Datasheet preview – BTS410E2

Datasheet Details

Part number BTS410E2
Manufacturer Siemens Semiconductor Group (now Infineon)
File Size 168.99 KB
Description Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
Datasheet download datasheet BTS410E2 Datasheet
Additional preview pages of the BTS410E2 datasheet.

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Full PDF Text Transcription

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PROFET® BTS 410 E2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 mΩ 1.
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