Datasheet4U Logo Datasheet4U.com

BUZ104S - Power Transistor

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUZ 104 S SPP14N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 13.5 A RDS(on) 0.1 Ω Package Ordering Code BUZ 104 S TO-220 AB Q67040-S4007-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 13.5 9.6 Pulsed drain current TC = 25 °C IDpuls 54 E AS Avalanche energy, single pulse ID = 13.5 A, VDD = 25 V, RGS = 25 Ω L = 571 µH, Tj = 25 °C mJ 52 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 13.5 A, V DS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 13.5 3.