BUZ31
BUZ 31
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 31
200 V
14.5 A
RDS(on)
0.2 Ω
Package TO-220 AB
Ordering Code C67078-S.1304-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 14.5 Unit A
ID IDpuls
TC = 30 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
14.5 9 m J
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 m H, Tj = 25 °C
Gate source voltage Power dissipation 200
VGS Ptot
± 20 95
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg Rth JC Rth JA
-55 ... + 150 -55 ... + 150 ≤ 1.32 75 E 55 / 150 / 56
°C K/W
07/96
BUZ...
