Datasheet Details
| Part number | 3VD499650YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 123.12 KB |
| Description | HIGH-VOLTAGE MOSFET |
| Datasheet |
 3VD499650YL Datasheet
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| Part number | 3VD499650YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 123.12 KB |
| Description | HIGH-VOLTAGE MOSFET |
| Datasheet |
3VD499650YL Datasheet
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¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology;
¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;
Avalanche Energy Specified;
3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS.
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