| Part number | 3VD499650YL |
|---|---|
| Download | 3VD499650YL Datasheet (PDF) |
| File Size | 123.12 KB |
| Manufacturer | Silan Microelectronics |
| Description | HIGH-VOLTAGE MOSFET |
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| Part Number | Description |
|---|---|
| 3VD156600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD182600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD186600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD186700YL | HIGH VOLTAGE MOSFET CHIPS |
¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified;.
