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Title
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Description
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SVG15670NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
FEATURES
25A, 150V, RDS(on)(typ.)=52m@VGS=10V ...
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Features
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25A, 150V, RDS(on)(typ.)=52m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant
S1 S2 S3 G4
8D 7D 6D 5D
8 7 6 5
65 87
4 23 1
1 32 4
PDFN-8-5X6X0.95-1.27
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max.
ID.pulse Qg.typ.
Rati...
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Datasheet
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 SVG15670NL5 Datasheet - 422.26KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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