| Title | |
| Description | SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in UPS, Power Management for Inv... |
| Features |
14A,100V, RDS(on)(typ.)=85m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
2
1 3
1.Gate 2.Drain 3.Source
1 3
TO-252-2L
S V TX X X R X N X
Silan Low voltage trench MOS products
Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V
Package information. Example: T:TO-220; D:TO-...
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| Datasheet |
 SVT10111ND Datasheet - 312.38KB |
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