| Title | |
| Description | SVT3025D4 is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems. 3 3 2 5 ... |
| Features |
Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant
3 1
2 45
TO-252-4L
KEY PERFORMANCE PARAMETERS
Characteristics
VDS VGS(th) RDS(on)，max
ID Qg.typ
Ratings
N-channel
P-channel
30
-30
1.0~2.5
-1.0~-2.5
23
38
23
-17
13
13
Unit
V V m A nC
ORDERING ...
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| Datasheet |
 SVT3025D Datasheet - 416.89KB |
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| Price | |
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