| Title | |
| Description | SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1. G... |
| Features |
130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant
1 23
TO-247-3L
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ.
Ratings 200
3.5~4.5 9.7 130 185
Unit V V m A nC
ORDERING INFORMATION
Part ...
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| Datasheet |
 SVTP209R7NP7 Datasheet - 285.22KB |
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