Datasheet Details
| Part number | SD11461 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 77.71 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
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| Part number | SD11461 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 77.71 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
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100V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max lD Gate-Source Voltage Continuous Drain Current PD TJ, TSTG Maximum Power Dissipation Junction Temperature, Operating and Storage ΘJC Thermal Resistance, junction-to-case TL Lead Temperature TEST CONDITIONS soldering, 10s VALUE 100 -20/+20 35 147 -55 to +150 0.85 +300 UNIT V V A W °C °C/W °C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11461 N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL CHARACTERISTIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage lDSS Off -State Drain Current IGSS Gate-Source Leakage Current RDS (on) Drain-Source On-state Resistance gfs Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay tr Rise Time td(off) Turn-Off Delay tf Fall Time Qg Total Gate Charge SOURCE-DRAIN DIODE RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Is Continuous Source Current Ism Pulsed Source Current Vsd Diode Forward Voltatge trr Reverse Recovery TEST CONDITIONS VGS < 0V, ID = 4mA VDS = VGS, ID = 4mA VGS = 0V, VDS = 100V, TJ = 25°C VGS = 0V, VDS = 80V, TJ = 125°C VGS = ±20V, VDS = 0V VGS = 10V, ID = 30A, TJ = 25°C VGS = 10V, ID = 30A, TJ = 125°C VDS = 15V, ID = 30A VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, VDD = 50V, ID = 50A, Rg = 2.5Ω external VGS = 10V, VDS = 80V, ID = 30A TEST
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