Datasheet Details
| Part number | SD11707 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 101.85 KB |
| Description | 1200V SiC N-Channel Power MOSFET |
| Datasheet | SD11707-SolitronDevices.pdf |
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Overview: KEY.
| Part number | SD11707 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 101.85 KB |
| Description | 1200V SiC N-Channel Power MOSFET |
| Datasheet | SD11707-SolitronDevices.pdf |
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1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 1200V Continuous Drain Current ID 50A 46A Pulsed Drain Current Max.
Power Dissipation Gate-to-Source Voltage (dynamic) Gate-to-Source Voltage (static) Operating Junction Temperature Storage Temperature Range Solder Temperature IDM PD VGSmax VGSop TJ TSTG TL 200A 277W -8/+19V -4/+15V -55°C to 175°C -55°C to 175°C 260°C CONDITIONS VGS = 0V, ID = 100µA VGS = 15V, TC = 25°C VGS = 15V, TC = 100°C VGS = 15V, limited by the package TC = 25°C, TJ - 175°C (see figure 2) 1.6mm (0.063”) from case for 10s CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11707 1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL SPECIFICATIONS TJ = 25°C unless otherwise noted Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Drain-to-Source On-State Resistance Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Energy Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Conditions VGS = 0V, ID = 100µA VDS = VGS, ID = 26.5mA, TJ = 25°C VDS = VGS, ID = 26.5mA, TJ = -55°C VDS = VGS, ID = 26.5mA, TJ = 175°C VDS = 1200V, VGS = 0V VGS = 15V, VDS = 0V VGS = 15V, ID = 50A, TJ = 25°C VGS = 15V, ID = 50A, TJ = 175°C VDS = 20V, IDS = 40A, TJ = 25°C VDS = 20V, IDS = 40A , TJ = 175°C VGS = 0V, VDS = 25V, f = 1.0MHz VDS = 300V, VGS = -4/15V, ID = 50A, RGon / RGoff = 10
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