| Description | 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 1200V Continuous Drain Current ID 50A 46A Pulsed Drain Current Max. Power Dissipation Gate-to-Source Voltage (dynamic) Gate-to-Source Voltage (static) Operating Junction Temperature Storage Temperature Range Solder Temperature IDM ... |
| Features |
LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE
APPLICATIONS
SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS
SD11707
1200V SiC N-Channel Power MOSFET - 1
3-G
VDS = 1200V
1-D
ID @ 25°C = 50A
...
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| Datasheet |
 SD11707 Datasheet 101.85KB |
