| Description | 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 100µA Absolute maximum values VGS = 15V Pulse Width tp ... |
| Features |
ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B
BENEFITS
PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIENCY EXCELLENT REVERSE RECOVERY
APPLICATIONS
HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES BATTERY CHARGERS SOLAR INVERTERS INDUCTION HEATING
SD11740
1200V SiC N-Channel Power MOSFET - 1
D
G KS
S
VDS =...
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| Datasheet |
 SD11740 Datasheet 73.63KB |
