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SD11740 Datasheet 1200v Sic N-channel Power MOSFET

Manufacturer: Solitron Devices

Overview: KEY.

Datasheet Details

Part number SD11740
Manufacturer Solitron Devices
File Size 73.63 KB
Description 1200V SiC N-Channel Power MOSFET
Datasheet SD11740-SolitronDevices.pdf

General Description

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 100µA Absolute maximum values VGS = 15V Pulse Width tp Limited by Tjmax VALUE 1200 -20/+20 100 tbd tbd -55 to +175 UNIT V V A A W °C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11740 1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS - STATIC (TJ = 25°C) SYMBOL CHARACTERISTIC V(BR)DSS Drain-Source Breakdown Voltage lDSS Total Drain Leakage Current IGSS Total Gate Leakage Current RDS (on) Drain-Source On-Resistance VG(th) Gate Threshold Voltage RG Gate Resistance TEST CONDITIONS VGS < 0V, ID = 1mA VGS = 0V, VDS = 1200V, TJ = 25°C VGS = 0V, VDS = 1200V, TJ = 175°C VGS = -20V/+20V, VDS = 0V VGS = 12V, ID = 100A, TJ = 25°C VGS = 12V, ID = 100A, TJ = 125°C VGS = 12V, ID = 100A, TJ = 175°C VDS = 5V, ID = 10mA f = 1MHz, open drain MIN.

TYP.

MAX.

Key Features

  • ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B.

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