Full PDF Text Transcription for SSS3401 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SSS3401. For precise diagrams, and layout, please refer to the original PDF.
SSS3401 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3A RDS(ON) (mΩ) Max 75 @VGS = -10V G 100 @VGS = -4.5V S D FEATURES Super high dens...
View more extracted text
mΩ) Max 75 @VGS = -10V G 100 @VGS = -4.5V S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -3 -10 -1.25 1.