Full PDF Text Transcription for SSS3403 (Reference)
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SSS3403 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3.4A RDS(ON) (mΩ) Max 45 @VGS = -10V G 80 @VGS = -4.5V S D FEATURES Super high den...
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(mΩ) Max 45 @VGS = -10V G 80 @VGS = -4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -3.4 -12 -1.25 1.