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ST3413 - P Channel Enhancement Mode MOSFET

General Description

The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3413
Manufacturer Stanson Technology
File Size 164.86 KB
Description P Channel Enhancement Mode MOSFET
Datasheet download datasheet ST3413 Datasheet

Full PDF Text Transcription for ST3413 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for ST3413. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION ST3413 The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produ...

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hannel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE z -20V/-3.4A, RDS(ON) = 95m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON)

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