ST3414A Datasheet | Stanson Technology

DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-23 FEATURE 20V/4.2A, RDS(ON) = 45mΩ ( Typ.) @VGS = 4.5V 20V/3.4A, RDS(ON) = 60 mΩ @VGS = 2.5V 20V/2.8A, RDS(ON) = 80 mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23package design 14YA 12 Y: Year Code A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST3414A 2012. V1 N Channel Enhancement Mode MOSFET 3.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM ±12 3.0 2.2 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ 1.25 0.8 Operation Junction Temperature TJ -55/150 Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA -55/150 125 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. ST3414A 2012....