ST3414A Datasheet PDF | Stanson Technology

Stanson Technology ST3414A

ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.

Part No.	ST3414A
Datasheet	ST3414A Download
Manufacturer	Stanson Technology
Description	3A N-Channel Enhancement Mode MOSFET
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DESCRIPTION

PIN CONFIGURATION SOT-23 3 D GS 12 1.Gate 2.Source 3.Drain PART MARKING SOT-23 FEATURE 20V/4.2A, RDS(ON) = 45mΩ ( Typ.) @VGS = 4.5V 20V/3.4A, RDS(ON) = 60 mΩ @VGS = 2.5V 20V/2.8A, RDS(ON) = 80 mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23package design 3 14YA 12 Y: Year Code A: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3414A 2012. V1 ST3414A N Channel Enhancement Mode MOSFET 3.0A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VDSS VGSS ID IDM 20 ±12 3.0 2.2 30 Continuous Source Current (Diode Conduction) IS 1.2 Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 Operation Junction Temperature TJ -55/150 Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA -55/150 125 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3414A 2012.