ST3413 Datasheet | Stanson Technology

DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE z -20V/-3.4A, RDS(ON) = 95m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.8V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOT-23-3L package design 1.Gate 2.Source 3.Drain 13YA 1 2 A: Process Code 1A: Part Marking Y: Year Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 P Channel Enhancement Mode MOSFET -3.4A ABSOULTE MAXIMUM RATINGS (Ta = 25¢J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150¢J ) TA=25¢J TA=70¢J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25¢J TA=70¢J Symbol VDSS VGSS ID IDM IS PD TJ TSTG R£c Typical -20 +/-12 -2.8 -2.0 -8 -1.4 0.33 0.21 150 -55/150 105 Unit V V A A A W ¢J ¢J ¢J /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 2 P Channel Enhancement Mode MOSFET -3.4A ELECTRICAL CHARACTERISTICS ( Ta = 25¢J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source...