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P Channel Enhancement Mode MOSFET -3.4A DESCRIPTION
ST3413
The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -20V/-3.4A, RDS(ON) = 95m-ohm @VGS = -4.5V z -20V/-2.4A, RDS(ON) = 120m-ohm @VGS = -2.5V z - 20V/-1.7A, RDS(ON) = 145m-ohm @VGS = -1.
ST3413 Datasheet
