Datasheet Details
| Part number | ST3413 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 164.86 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet | ST3413_StansonTechnology.pdf |
|
|
Overview: www.DataSheet4U.com P Channel Enhancement Mode MOSFET -3.4A.
| Part number | ST3413 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 164.86 KB |
| Description | P Channel Enhancement Mode MOSFET |
| Datasheet | ST3413_StansonTechnology.pdf |
|
|
|
ST3413 The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
| Part Number | Description |
|---|---|
| ST3413A | MOSFET |
| ST3414 | MOSFET |
| ST3414A | 3A N-Channel Enhancement Mode MOSFET |
| ST3414S23RG | MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
| ST3400S23RG | N-Channel Enhancement Mode MOSFET |
| ST3400SRG | N-Channel Enhancement Mode MOSFET |
| ST3401 | P-Channel Enhancement Mode MOSFET |
| ST3401M23RG | P-Channel Enhancement Mode MOSFET |
| ST3401SRG | P-Channel Enhancement Mode MOSFET |